|
Products Type |
Specifications
|
SI type GaAs wafer
|
SC type GaAs wafer
|
Resistivity |
>10 7 Ω． cm
|
0.001-0.1 Ω． cm
|
Mobility |
>7,000 cm 2 /v ． sec
|
1,000-3,000 cm 2 /v
． sec
|
Doping Elements
|
Undoped |
Si-Doped, Zn-doped
|
Electrical type
|
Semi-insulation （
Undoped ）
|
n-type （ Si ），
p-type （ Zn ）
|
Wafer Size |
2” ， 3” ， 4” ， 6”
|
2” ， 2.5” ， 3”
|
|
|
|
Ingots,Wafer&Poly |
|
 |
|
Major Products |
|
We offer single crystals of GaAs produced by
three alternative growth techniques from
LEC, VGF to LE-VB providing the widest
choice of materials for customer's
application. High purity poly crystalline
GaAs can be produced as well.
Gallium
arsenide can be supplied as ingot sections or
as-cut, etched or polished wafers. All gallium
arsenide wafers are individually laser scribed with
ingot and slice identify to ensure perfect
traceability.
The
standard orientation for all ours GaAs is （ 100 ） .
Most other orientation are available on request.
|
|
|
Semi-conducting GaAs
（ LE-VB ＆ VGF ， LEC ） |
Parameter |
Unit |
2 inch |
3 inch |
Dopant |
|
Si, Zn |
Si, Zn |
Diameter* |
mm |
50.8+/-0.4 |
76.2+/-0.4 |
Orientation |
° |
（ 100 ） 0~15 off
|
Orientation Flat （
OF ）
|
SEMI-EJ |
|
（ 0-1-1 ） |
（ 0-1-1 ） |
SEMI-US |
|
（ 01-1 ） |
（ 01-1 ） |
Length |
mm |
17+/-1 |
22+/-1 |
Identification Flat
（ IF ）
|
SEMI-EJ |
|
（ 0-11 ） |
（ 0-11 ） |
SEMI-US |
|
（ 01-1 ） |
（ 01-1 ） |
Length |
mm |
7+/-1 |
11+/-1 |
Thickness* |
μ m |
350+/-25 |
450+/-25 |
Total thickness
variation （ TTV ）
|
μ m |
≦ 4 |
≦ 4 |
Total indicated
reading （ TIR ）
|
μ m |
≦ 3 |
≦ 4 |
Warp* |
μ m |
≦ 4 |
≦ 4 |
Surface |
Front Side |
|
Polished |
Polished |
Back Side-Standard
|
|
Etched |
Etched |
Back Side-Option
|
|
As-cut |
Polished |
Laser Marking |
|
N/A |
Upon Request |
Resistivity |
Ω． cm |
0.001~0.1 （ Si Doped
）
|
Hall Mobility |
cm 2 /v.sec |
1,000~3,000 （ Si
Doped ）
|
Carrier
Concentration
|
cm -3 |
（ 1~40 ） E17 （ Si
Doped ）
|
Etch Pit Density
|
cm -2 |
<500, <5000, <1E4
|
Packing |
standard |
|
cassette |
cassette |
option |
|
Single wafer
container
|
Single wafer
container
|
*others upon request
|
|
Semi-insulating GaAs
（ LEC ＆ LE-VB ） |
Parameter |
Unit |
3 inch |
4 inch |
6 inch |
Dopant |
|
Undoped |
Diameter* |
mm |
76.2+/-0.4 |
100+/-0.4 |
150+/-0.4 |
Orientation |
° |
（ 100 ） +/-0.5
|
（ 100 ） +/-0.5
|
（ 100 ） +/-0.5
|
Off Orientation*
|
° |
2.0+/-0.5 |
2.0+/-0.5 |
2.0+/-0.5 |
Orientation Flat （
OF ）
|
SEMI-EJ |
|
（ 0-1-1 ） |
（ 0-1-1 ） |
|
SEMI-US |
|
（ 01-1 ） |
（ 01-1 ） |
Length |
mm |
22+/-1 |
32.5+/-1 |
Identification Flat
（ IF ）
|
SEMI-EJ |
|
（ 0-11 ） |
（ 0-11 ） |
SEMI-US |
|
（ 01-1 ） |
（ 01-1 ） |
Length |
mm |
7+/-1 |
11+/-1 |
Notch |
Orientation |
° |
|
|
（ 010 ） +/-2 |
Angle |
° |
90+5/-1 |
Depth |
mm |
1.00+0.25-0.00
|
Thickness* |
μ m |
450+/-25 |
625+/-25 |
675+/-25 |
Total thickness
variation （ TTV ）
|
μ m |
≦ 4 |
≦ 4 |
≦ 6 |
Total indicated
reading （ TIR ）
|
μ m |
≦ 4 |
≦ 5 |
≦ 6 |
Local focial plan
deviation （ LFPD ）
|
μ m |
≦ 1.5 |
≦ 1.5 |
≦ 1.5 |
Local thickness
variation （ LTV ）
|
μ m |
≦ 1 |
≦ 1 |
≦ 1.8 |
Measurement site
|
mm |
15 x 15 |
20 x 20 |
20 x 20 |
Warp |
μ m |
≦ 4 |
≦ 5 |
≦ 7 |
Surface finish
|
Front Side |
|
Polished |
Polished |
Polished |
Back Side-Standard
|
|
Etched |
Polished |
Polished |
Back Side-Option
|
|
Polished |
|
Laser Marking |
|
Upon Request |
According to SEMI
M12
|
Resistivity |
Ω． cm |
>1E7 |
>1E7 |
>1E7 |
Hall Mobility |
cm 2 /v.sec |
>6000, >7000
|
Etch Pit Density
|
cm -2 |
<7E4 |
<1E5 |
<1.5E5 |
Packaging |
standard |
|
Single wafer
container
|
Single wafer
container
|
Single wafer
container
|
option |
|
Cassette |
Cassette |
Cassette |
*others
upon request
|
|
|
|
| |
|
|
|
|
|
