Parameter

Spec.

Unit

Crystal Type

Monocrystalline

Growth Method

CZ

Conduction Type

p-type/boron

Surface Orientation

(100) ±5∘

Side Orientation

<001>

Resistivity

0.5 to 3

Ohm/cm

Lifetime

≧10 with passivation

μs

Carbon Content

≦1.0E17

Atoms/cm3

Oxygen Content

≦1.0E18

Atoms/cm3

Wafer Length

156 ± 0.5

mm

Diagonal Length

195 or 200 ± 1

mm

Straight Length Deviation

≦1

Square Angle

90 ± 0.2

Deg

Thickness

200 ± 20

μm

TTV

≦ 40

μm

Bow

≦ 50

μm

Saw mark depth

≦ 20

μm

Edge defect/ Chips

≦1, not longer and deeper than 0.1mm