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‧GaAs wafer　‧InP wafer　‧Solar Silicon wafer　‧Solar Cell
 
Solar Silicon Wafer
Wafer spec Mono 156x156mm Multi156x156mm unit
Type P/Boron P/Boron -
Wafer Length 156 +/-0.5 156 +/-0.5 mm
Resistivity 0.5 ~ 3  0.5 ~ 3  ohm-cm
Diagonal length 195 or 200 +/-1.0 - mm
Thickness 200 +30/-20 200 +30/-20 um
Squareness 90+/-0.3° 90+/-0.3° degree
Carbon ≦ 1E17 ≦ 8E17 atom/cm3
Oxygen ≦ 1E18 ≦ 1E18 atom/cm3
life time (wafer level) As COA ≧ 0.7 us
Orientation <100> +/-3 ° - degree
TTV ≦40 ≦40 um
Saw mark depth ≦20 ≦20 um
Warpage ≦60 ≦60 um
Crack/holes Not allowed Not allowed -
Saw mark ≦15 ≦15 um
Surface defect

As-cut, cleaned ok, no visible stain

As-cut, cleaned ok, no visible stain

 -
Edge defect  L≦1.5mm; W≦0.5mm
no V-type chip		 L≦1.5mm; W≦0.5mm
no V-type chip		 -
 
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