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HOMESEMICONDUCTOR EQUIPMENT/MOCVD SYSTEM
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A wafer bonder joins two or several wafers/substrates permanently or temporarily and it needs different force, heat and current in accordance with the process. We have developed Focus series for optoelectronic devices application, designed to be suitable for direct, solder and adhesive bonding between wafers/substrates at high temperature and pressure. Heater is mounted on the top/bottom side to minimize the warping of wafers/substrates generated from different thermal expansion coefficient. The bonding process is possible under hydrogen atmosphere.
- Applicable to high power optoelectronic devices
- Automatic control of bonding parameters and able to analyze the process using recorded data
- Equipped with Top/Bottom heater to prevents wafer warping
- Able to process under hydrogen atmosphere
- Precise control of the force system
 
 
Top Side Max. Temperature 500
Bottom Side Max. Temperature 850
Uniformity 1% at 500for 2"  wafer
Turbo Molecular Pump &
Roughing Pump Ultimate Pressure
7.6 * 10 -6 Torr
Force Maximum 300kgf
Process Atmosphere N2  or  H2
Heater SiC
Wafer Capability 1 * 2",  1 * 3",  1 * 4"
Bottom side moving & Pneumatic actuate  
Automatic process contol  
   
   
   
 
 
 
 
 
 
Taipei Taiwan:  Tel:886-2-28250196/Email:toptower@tpts1.seed.net.tw  
Tainan Taiwan: Tel:886-6-7032227/Email:toptower@ms31.hinet.net Beijing China: Tel:86-10-88389596/Email:top_crystaltech@yahoo.com.cn

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