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Wafer Capacity |
1 * 2" , 6 * 2" , 30 x 2" (under development) |
| Applications |
III-Nitrides,
III-V Compounds |
| Process
Temperature |
up to 1200 ℃ |
| Temperature
Uniformity |
deviation of
less than 2℃ at 1150 ℃ |
| Heating Method |
Induction
Heating (Unique and Simplified design) |
| Susceptor Rotation Speed |
up to 200 RPM |
| Process Pressure |
1~760 torr (measurable ultimate pressure 0.001 torr ) |
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Gas Supply |
H2, N2, NH3, SiH4, Air |
| Control System |
PC based control
(Beckhoff & VLC)
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| Dimensions(unit:mm) |
4760(L;
Including gas cabinet)* 1900(H)* 950(D)
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