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GaAs wafer ‧InP wafer ‧Solar Silicon wafer ‧Solar Cell
 
InP wafer specifiation
 

  2'' 3''
Geometry
Diameter

Thickness

Orientation

Flats

OF(011)±0.02°

IF(011)±1°

Sufface finish

TTV,LTV

Bow,warp

Laser marking

packing

50.0 or 50.8±0.3mm

350±20μm

(100)exact or off ±0.05°

EJ

16±21mm

8±2 mm one or double side

one or double side polished

<5μm

<10μm

upon request

individual container under N2

76.2±0.4

620±25m μm

(100)exact or off ±0.05°

EJ

22±2mm

11±2mm one or double side 

one or double polished

<5μm

<10μm

upon request

individual container under N2

Bulk
-EPD

Fe,Sn

S,Zn

-X ray Diffraction

Fe,Sn

S, Zn

 

<30000

<500

15±2 arc sec

12±1 are sec

<50000

<500(<70%area)

16±4 arc sec

12±1 are sec  

Surface
Particulates (dianeter>0.3μm)

Contaminations all metallic element

Si ciutant

<100

=0

<2 10 11 /cm 2

<100

=0

<2 10 11 /cm 2

 
 
 
 
 
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