關於我們最新消息認識太陽能實績案例常見問題人才招募聯絡我們最新產品

首頁/ 光電半導體材料/ 晶片
全文檢索
GaAs wafer ‧InP wafer ‧Solar Silicon wafer ‧Solar Cell
 
Solar Silicon Wafer
 
Wafer spec Mono 156x156mm Multi156x156mm unit
Type P/Boron P/Boron -
Wafer Length 156 +/-0.5 156 +/-0.5 mm
Resistivity 0.5 ~ 3  0.5 ~ 3  ohm-cm
Diagonal length 195 or 200 +/-1.0 - mm
Thickness 200 +30/-20 200 +30/-20 um
Squareness 90+/-0.3° 90+/-0.3° degree
Carbon ≦ 1E17 ≦ 8E17 atom/cm3
Oxygen ≦ 1E18 ≦ 1E18 atom/cm3
life time (wafer level) As COA ≧ 0.7 us
Orientation <100> +/-3 ° - degree
TTV ≦40 ≦40 um
Saw mark depth ≦20 ≦20 um
Warpage ≦60 ≦60 um
Crack/holes Not allowed Not allowed -
Saw mark ≦15 ≦15 um
Surface defect As-cut, cleaned ok, no visible stain As-cut, cleaned ok, no visible stain -
Edge defect  L≦1.5mm; W≦0.5mm
no V-type chip
L≦1.5mm; W≦0.5mm
no V-type chip
-
 
台灣總公司:電話:886-2-28250196/電子郵件:toptower@tpts1.seed.net.tw  
台南分公司:電話:886-6-7032227/電子郵件:toptower@ms31.hinet.net 中國北京辦事處:電話:86-10-88389596/電子郵件:top_crystaltech@yahoo.com.cn

藍天資訊 設計維護